Argon purification device

Purification methods

First method: Direct deoxidation. This method involves using active metals and catalysts to react with oxygen in argon gas, removing the oxygen and achieving deoxidation. After that, a molecular sieve absorbs the water in the argon gas, reducing the water content to less than 1 ppm.

Second method: Using an absorbent. At a certain temperature, the absorbent can absorb gases such as nitrogen, hydrogen, oxygen, carbon monoxide, carbon dioxide, and methane. After absorption treatment, the purity of argon can reach six nines. This process produces high-purity gas suitable for various instruments and meters.

Technical parameters

1. Processing gas volume: 5~1500 Nm3/h (Non-standard equipment can be customized according to user needs)
2. Raw material gas requirements: Liquid argon or better pipeline argon can be used
3. Working pressure: 0.2-1.6 MPa adjustable
4. (Argon purifier) Purification efficiency: After purification, it meets and exceeds the requirements of GB/T4842-2006 of 99.9996%

Equipment features

1. The purifier uses the best purification materials in China. Its features include good adsorption depth and large absorption capacity of impurity gases, with a maximum purity of over 99.9999%.
2. The purifier adopts a special structure and loading method, with reasonable flow rate design and uniform gas distribution.
3. All BA-grade internal and external precision-drawn pipe lines. Imported compression-type ball valves are used. This eliminates the secondary contamination of gas flowing through the pipeline, allowing for one-time installation and lifelong use, truly achieving zero leakage and trouble-free operation.
4. Dual structure. After starting, one group works while the other regenerates and stands by. The RZ-YA-C series semi-automatic purification device performs both work and regeneration automatically, so it can continuously supply gas, with one unit capable of replacing two single units.
1.4 Application fields
This series of argon purification devices are used in high-purity gas filling stations, welding, stainless steel manufacturing, smelting, and also in semiconductor manufacturing processes such as chemical vapor deposition, crystal growth, thermal oxidation, epitaxy, diffusion, polysilicon, tungstenization, ion implantation, current carrying, and sintering, where argon is used as a protective gas in the production of single crystal and polycrystalline silicon.